DPG20C400PN
ns
4
A
TVJ
=°C25
reverse recovery time
A
6
45
65
ns
IRM
max. reverse recovery current
IF
=A;10
VR
=V270
T=125°CVJ
-diF/dt
=A/μs200
trr
TVJ
=°C25
T=125°CVJ
V = VR
400
Symbol Definition
Ratings
typ. max.
IR
V
IFAV
A
VF
1.32
RthJC
4.4 K/W
min.
10
VRSM
V
1
T = 25°CVJ
T = °CVJ
150
mA
0.15
V = VR
400
T = 25°CVJ
I = AF
10
V
T = °CC
125
Ptot
35
W
T = 25°CC
RthCH
K/W
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.51
T = 25°CVJ
VF0
V
0.77
T = °CVJ
175
rF
19.8
m?
V
1.03
T = °CVJ
150
I = AF
10
V
1.24
I = AF
20
I = AF
20
threshold voltage
slope resistance
for power loss calculation only
μA
VRRM
V
400
max. repetitive reverse blocking voltage
T = 25°CVJ
CJ
12
junction capacitance
V = VR
200 T = 25°Cf = 1 MHz
VJ
pF
IFSM
t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR
VJ
max. forward surge current
T = °CVJ
175
150
A
rectangular 0.5d =
average forward current
thermal resistance junction to case
thermal resistance case to heatsink
Fast Diode
400
0.50
IXYS reserves the right to change limits, conditions and dimensions.
20131101a
Data according to IEC 60747and per semiconductor unless otherwise specified
? 2013 IXYS all rights reserved
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相关PDF资料
DPG30C200PB
DIODE HFRED 200V 2X15A TO-220AB
DPG30C200PC
DIODE HFRED 200V 2X15A TO-263AB
DPG30C300HB
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DIODE HFRED 400V 2X15A TO-247
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DIODE HFRED 400V 2X15A TO-220
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DIODE HFRED 200V 2X30A TO-247
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